ballasting

英 [ˈbæləstɪŋ]

美 [ˈbæləstɪŋ]

n.  压舱物，加沙袋；压载材料

双语例句

• Study on Dual Emitter Ballasting of Silicon Microwave Power Transistor
  硅微波功率器件二次发射极镇流研究
• The experimental results of dual emitter ballasting using a complex emitter ballasting resistor which is provided by a diffused silicon resistor and a poly silicon resistor in silicon microwave power transistor are reported.
  本文报道了采用多晶硅电阻和扩散电阻组合而成的复合镇流电阻对硅微波功率器件进行二次发射极镇流的实验结果。
• Electronic Ballasting with the Charge and Discharge for Capacitance
  电子镇流与电容充放电
• The V-I characteristic has a positive slope. The discharge can operate in parallel to form the large discharge array without individual ballasting resistors.
  而且它们的伏-安特性具有正的微分电阻系数，能够很方面地构成大的放电阵列，而不用分立镇流电阻和放电隔离。
• Also, a method of ballasting using high pressure tank is described in detail, and calculation of ballasting weight is explained by giving an example.
  论文详细描述了用压力罐进行浮标压载重量标定的方法，并通过一台浮标的压载实验给出浮标配重计算方法。
• The model of cargo liquid and ballasting pipeline network is then simulated by the methods of predecessors. The dynamic and static simulations are developed after concerning different kinds of factors systematically.
  之后运用前人的管网有限元方法对母型船液货、压载管网进行仿真建模，在系统地考虑了多种因素的前提下，实现了化学品船液货系统操作动态仿真和静态仿真。
• Improvement of Ballasting for Silicon Bipolar Power Transistor
  硅双极功率晶体管镇流技术的改进
• A C-band InGaP/ GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning, emitter ballasting, and an electric plated air bridge.
  通过优化InGaP/GaAs异质结双极晶体管（HBT）的材料结构和器件结构，采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术，研制了C波段InGaP/GaAsHBT功率管。
• Using this method we attained and compared the electrode temperature at different ballasting while the lamps are vertically burning.
  用这个方法测量并比较了金属卤化物灯在竖直燃点时，不同镇流器工作条件时的电极温度。
• The paper analyses the model's characteristic of common electronic ballasting. Discusses the most essence characteristic of electronic ballasting and the electrophoresis of the charge and discharge for capacitance.
  本文分析了普通电子镇流模型的特点，探讨了电子镇流的最本质特征和其中的电容充放电现象。